Описание
Отзывы
Технические параметры
FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 290 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | |
| TO-247 | |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | +/-400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | |
| TO-247 | |
| Packaging: | Tube |
| Pd - Power Dissipation: | 349 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | FGH40N60SMD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес брутто | 7.22 |
| Тип | IGBT транзистор 600В, 80А |
| Транспортная упаковка: размер/кол-во | 60*41*41/900 |
| Упаковка | TUBE, 30 шт. |
| Base Part Number | FGH40N60 |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 119nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Manufacturer | ON Semiconductor |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 349W |
| Reverse Recovery Time (trr) | 36ns |
| Series | - |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 870ВµJ(on), 260ВµJ(off) |
| Td (on/off) @ 25В°C | 12ns/92ns |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 80 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 290 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | +/-400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | TO-247 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 349 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | FGH40N60SMD |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес брутто | 7.22 |
| Тип | IGBT транзистор 600В, 80А |
| Транспортная упаковка: размер/кол-во | 60*41*41/900 |
| Упаковка | TUBE, 30 шт. |
| Base Part Number | FGH40N60 |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Gate Charge | 119nC |
| IGBT Type | Field Stop |
| Input Type | Standard |
| Manufacturer | ON Semiconductor |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Part Status | Active |
| Power - Max | 349W |
| Reverse Recovery Time (trr) | 36ns |
| Series | - |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 870ВµJ(on), 260ВµJ(off) |
| Td (on/off) @ 25В°C | 12ns/92ns |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Voltage - Collector Emitter Breakdown (Max) | 600V |